UltraRAM: Could It Be the Next Big Revolution in High-speed Computing?

A breakthrough technology demonstrated by researchers could upend the existing practice of implementing data storage and dynamic memory (RAM) components as separate units. Possibly years away from mass adoption, UltraRAMs can save space in PCs and retain data for 1000 years.

The design of present-day motherboards for computers necessitates two different slots for storage and memory. This is primarily due to the technological limitations in bridging the gap between the two very different components that form the core of computing. However, things may soon change, thanks to the latest breakthrough by researchers at the Physics and Engineering Department of the UK’s Lancaster University. 

The breakthrough was published last week by physicists Peter D. Hodgson, Dominic Lane, Peter J. Carrington, Evangelia Delli, Richard Beanland, and Manus Hayne. It describes how their research may enable mass production of UltraRAM, blending “the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM.”

Storage essentially implies the ability to retain information in the component even after power is cut off or, in other words, if the computer is shut down. Hence, it is called non-volatile memory. On the other hand, a volatile memory such as the random access memory (RAM) is where data is immediately discarded as soon as the motherboard loses power.

Storage units, such as solid-state drives (SSD) or hard disk drives (HDD), serve as a feeder to the RAM, which loads relevant data when the operating system or any other application is booted. This data is then sent to the central processing unit (CPU). In some cases, non-volatile storage can and is being used as RAM.

For instance, Windows 7 allows a user to allocate a chunk of the storage space to be used as RAM. However, non-volatile storage, even SSD, isn’t as fast as DRAM, thereby restricting its applicability for a combined offering. Non-volatile storage also fails in terms of memory endurance, which is the number of times a memory device can perform the write/erase cycle before it fails in reading the data.

The technology, which leverages indium arsenide (InAs) quantum wells and aluminum antimonide (Alsb) barriers, is difficult to explain in layman’s terms. In simple words, it means that the UltraRAM advancement eliminates the need to maintain two distinct memory components for two different functions. In theory, a single UltraRAM can fulfill the long-term storage requirements without compromising on the speed of the DRAM for random and rapid access operations.

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The concept of UltraRAM isn’t new, however. Intel tried its hand at developing a fast storage and memory unit. The result was Intel Optane (SSD and memory). While Optane did offer breakneck speeds, only smaller 16GB or 32GB Optane modules consistently hit the spot. In contrast, the bigger ones (NAND-based SSD replacements) delivered a reduced performance after the smaller modules were occupied.

Intel Optane didn’t quite pick up steam, and neither did Samsung’s Z-NAND, Kioxia and Western Digital’s XL-FLASH, which also deliver lower latency, power efficiency, endurance, etc.

The physicists theorized that their research could break down the barriers in the mass production of UltraRAM. “The ≈2.5 V program/erase voltage and low device-areal-capacitance results in a switching energy per unit area that is 100 and 1000 times lower than DRAM and flash respectively,” they noted.

They added, “Extrapolated retention times in excess of 1000 years and degradation-free endurance tests of over 10^7 program-erase cycles prove that these memories are non-volatile and have high endurance. Further work to improve epitaxial quality, fine-tune the fabrication process, implement a normally-off channel design and scale the devices is ongoing.”

Until this is achieved, the tech behind UltraRAM remains a theory. It may be years before UltraRAMs become mainstream. Possible use cases include your run-of-the-mill personal computer to supercomputers. Regular PCs may need an overhauled motherboard design in the future if UltraRAMs prove to be a hit. Additionally, UltraRAMs could simplify the implementation of memory and storage hierarchy in data centers.

Some of the other memory tech advancements in recent years include ferroelectric RAM (FRAM), magnetoresistive RAM (MRAM), phase-change RAM (PRAM), Silicon-Oxide-Nitride-Oxide-Silicon (SONOS), and Nano-RAM for dynamic use. All these serve the same purpose but with different underlying technologies. Meanwhile, NVMe and NVMe over Fabrics (NVMeoF) are used for block storage.

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